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Improved interfacial and electrical properties of GaSb metal oxide semiconductor devices passivated with acidic (NH
4
)
2
S solution
赵连锋, 谭桢, 王敬, 许军
Improved interfacial and electrical properties of GaSb metal oxide semiconductor devices passivated with acidic (NH
4
)
2
S solution
Zhao Lian-Feng (赵连锋), Tan Zhen (谭桢), Wang Jing (王敬), Xu Jun (许军)
Chin. Phys. B . 2014, (
7
): 78102 -078102 . DOI: 10.1088/1674-1056/23/7/078102