Fabricating GeO
2 passivation layer by N
2O plasma oxidation for Ge NMOSFETs application
林猛, 安霞, 黎明, 云全新, 李敏, 李志强, 刘朋强, 张兴, 黄如
Fabricating GeO
2 passivation layer by N
2O plasma oxidation for Ge NMOSFETs application
Lin Meng (林猛), An Xia (安霞), Li Ming (黎明), Yun Quan-Xin (云全新), Li Min (李敏), Li Zhi-Qiang (李志强), Liu Peng-Qiang (刘朋强), Zhang Xing (张兴), Huang Ru (黄如)
中国物理B
.
2014, (6): 67701
-067701
.
DOI: 10.1088/1674-1056/23/6/067701