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Binding energies of impurity states in strained wurtzite GaN/Al
x
Ga
1-
x
N heterojunctions with finitely thick potential barriers
冯振宇, 班士良, 朱俊
Binding energies of impurity states in strained wurtzite GaN/Al
x
Ga
1-
x
N heterojunctions with finitely thick potential barriers
Feng Zhen-Yu (冯振宇), Ban Shi-Liang (班士良), Zhu Jun (朱俊)
中国物理B . 2014, (
6
): 66801 -066801 . DOI: 10.1088/1674-1056/23/6/066801