Model of hot-carrier induced degradation in ultra-deep sub-micrometer nMOSFET

雷晓艺, 刘红侠, 张月, 马晓华, 郝跃

Lei Xiao-Yi (雷晓艺), Liu Hong-Xia (刘红侠), Zhang Yue (张月), Ma Xiao-Hua (马晓华), Hao Yue (郝跃)

中国物理B . 2014, (5): 57305 -057305 . DOI: 10.1088/1674-1056/23/5/057305