Influence of the channel electric field distribution on the polarization Coulomb field scattering in In <sub>0.18</sub>Al <sub>0.82</sub>N/AlN/GaN heterostructure field-effect transistors

Influence of the channel electric field distribution on the polarization Coulomb field scattering in In _0.18Al _0.82N/AlN/GaN heterostructure field-effect transistors

于英霞, 林兆军, 栾崇彪, 吕元杰, 冯志红, 杨铭, 王玉堂

Influence of the channel electric field distribution on the polarization Coulomb field scattering in In _0.18Al _0.82N/AlN/GaN heterostructure field-effect transistors

Yu Ying-Xia (于英霞), Lin Zhao-Jun (林兆军), Luan Chong-Biao (栾崇彪), Lü Yuan-Jie (吕元杰), Feng Zhi-Hong (冯志红), Yang Ming (杨铭), Wang Yu-Tang (王玉堂)

中国物理B . 2014, (4): 47201 -047201 . DOI: 10.1088/1674-1056/23/4/047201