100-nm T-gate InAlAs/InGaAs InP-based HEMTs with
f
T=249 GHz and
f
max=415 GHz
汪丽丹, 丁芃, 苏永波, 陈娇, 张毕禅, 金智
100-nm T-gate InAlAs/InGaAs InP-based HEMTs with
f
T=249 GHz and
f
max=415 GHz
Wang Li-Dan (汪丽丹), Ding Peng (丁芃), Su Yong-Bo (苏永波), Chen Jiao (陈娇), Zhang Bi-Chan (张毕禅), Jin Zhi (金智)
中国物理B
.
2014, (3): 38501
-038501
.
DOI: 10.1088/1674-1056/23/3/038501