Different influences of Schottky metal on the strain and relative permittivity of barrier layer between AlN/GaN and AlGaN/GaN heterostructure Schottky diodes
吕元杰, 冯志红, 顾国栋, 敦少博, 尹甲运, 王元刚, 徐鹏, 韩婷婷, 宋旭波, 蔡树军, 栾崇彪, 林兆军
Different influences of Schottky metal on the strain and relative permittivity of barrier layer between AlN/GaN and AlGaN/GaN heterostructure Schottky diodes
Lü Yuan-Jie (吕元杰), Feng Zhi-Hong (冯志红), Gu Guo-Dong (顾国栋), Dun Shao-Bo (敦少博), Yin Jia-Yun (尹甲运), Wang Yuan-Gang (王元刚), Xu Peng (徐鹏), Han Ting-Ting (韩婷婷), Song Xu-Bo (宋旭波), Cai Shu-Jun (蔡树军), Luan Chong-Biao (栾崇彪), Lin Zhao-Jun (林兆军)
中国物理B
.
2014, (2): 27102
-027102
.
DOI: 10.1088/1674-1056/23/2/027102