Quasi-two-dimensional threshold voltage model for junctionless cylindrical surrounding gate metal-oxide-semiconductor field-effect transistor with dual-material gate
李聪, 庄奕琪, 张丽, 靳刚
Quasi-two-dimensional threshold voltage model for junctionless cylindrical surrounding gate metal-oxide-semiconductor field-effect transistor with dual-material gate
Li Cong (李聪), Zhuang Yi-Qi (庄奕琪), Zhang Li (张丽), Jin Gang (靳刚)
Chin. Phys. B . 2014, (1): 18501 -018501 .  DOI: 10.1088/1674-1056/23/1/018501