High quality above 3-μm mid-infrared InGaAsSb/AlGaInAsSb multiple-quantum well grown by molecular beam epitaxy
邢军亮, 张宇, 徐应强, 王国伟, 王娟, 向伟, 倪海桥, 任正伟, 贺振宏, 牛智川
High quality above 3-μm mid-infrared InGaAsSb/AlGaInAsSb multiple-quantum well grown by molecular beam epitaxy
Xing Jun-Liang (邢军亮), Zhang Yu (张宇), Xu Ying-Qiang (徐应强), Wang Guo-Wei (王国伟), Wang Juan (王娟), Xiang Wei (向伟), Ni Hai-Qiao (倪海桥), Ren Zheng-Wei (任正伟), He Zhen-Hong (贺振宏), Niu Zhi-Chuan (牛智川)
Chin. Phys. B
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2014, (1): 17805
-017805
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DOI: 10.1088/1674-1056/23/1/017805