Effects of charge and dipole on flatband voltage in an MOS device with a Gd-doped HfO 2 dielectric
韩锴, 王晓磊, 杨红, 王文武
Effects of charge and dipole on flatband voltage in an MOS device with a Gd-doped HfO 2 dielectric
Han Kai (韩锴), Wang Xiao-Lei (王晓磊), Yang Hong (杨红), Wang Wen-Wu (王文武)
中国物理B . 2013, (11): 117701 -117701 .  DOI: 10.1088/1674-1056/22/11/117701