The degradation mechanism of an AlGaN/GaN high electron mobility transistor under step-stress
陈伟伟, 马晓华, 侯斌, 祝杰杰, 张进成, 郝跃
The degradation mechanism of an AlGaN/GaN high electron mobility transistor under step-stress
Chen Wei-Wei (陈伟伟), Ma Xiao-Hua (马晓华), Hou Bin (侯斌), Zhu Jie-Jie (祝杰杰), Zhang Jin-Cheng (张进成), Hao Yue (郝跃)
中国物理B
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2013, (10): 107303
-107303
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DOI: 10.1088/1674-1056/22/10/107303