The effects of strain and surface roughness scattering on the quasi-ballistic characteristics of a Ge nanowire p-channel field-effect transistor
秦洁宇, 杜刚, 刘晓彦
The effects of strain and surface roughness scattering on the quasi-ballistic characteristics of a Ge nanowire p-channel field-effect transistor
Qin Jie-Yu (秦洁宇), Du Gang (杜刚), Liu Xiao-Yan (刘晓彦)
中国物理B . 2013, (10): 107104 -107104 .  DOI: 10.1088/1674-1056/22/10/107104