Effect of In
xGa
1-xN “continuously graded” buffer layer on InGaN epilayer grown by metalorganic chemical vapor deposition
钱卫宁, 宿世臣, 陈弘, 马紫光, 朱克宝, 何苗, 卢平元, 王耿, 卢太平, 杜春花, 王巧, 吴汶波, 张伟伟
Effect of In
xGa
1-xN “continuously graded” buffer layer on InGaN epilayer grown by metalorganic chemical vapor deposition
Qian Wei-Ning (钱卫宁), Su Shi-Chen (宿世臣), Chen Hong (陈弘), Ma Zi-Guang (马紫光), Zhu Ke-Bao (朱克宝), He Miao (何苗), Lu Ping-Yuan (卢平元), Wang Geng (王耿), Lu Tai-Ping (卢太平), Du Chun-Hua (杜春花), Wang Qiao (王巧), Wu Wen-Bo (吴汶波), Zhang Wei-Wei (张伟伟)
中国物理B
.
2013, (10): 106106
-106106
.
DOI: 10.1088/1674-1056/22/10/106106