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Improved interface properties of an HfO
2
gate dielectric GaAs MOS device by using SiN
x
as an interfacial passivation layer
朱述炎, 徐静平, 汪礼胜, 黄苑
Improved interface properties of an HfO
2
gate dielectric GaAs MOS device by using SiN
x
as an interfacial passivation layer
Zhu Shu-Yan (朱述炎), Xu Jing-Ping (徐静平), Wang Li-Sheng (汪礼胜), Huang Yuan (黄苑)
中国物理B . 2013, (
9
): 97301 -097301 . DOI: 10.1088/1674-1056/22/9/097301