Equivalent oxide thickness scaling of Al
2O
3/Ge metal-oxide-semiconductor capacitors with ozone post oxidation
孙家宝, 杨周伟, 耿阳, 卢红亮, 吴汪然, 叶向东, 张卫, 施毅, 赵毅
Equivalent oxide thickness scaling of Al
2O
3/Ge metal-oxide-semiconductor capacitors with ozone post oxidation
Sun Jia-Bao (孙家宝), Yang Zhou-Wei (杨周伟), Geng Yang (耿阳), Lu Hong-Liang (卢红亮), Wu Wang-Ran (吴汪然), Ye Xiang-Dong (叶向东), David Zhang Wei (张卫), Shi Yi (施毅), Zhao Yi (赵毅)
中国物理B
.
2013, (6): 67701
-067701
.
DOI: 10.1088/1674-1056/22/6/067701