Influence of drain bias on the electron mobility in the AlGaN/AlN/GaN heterostructure field-effect transistors
吕元杰, 冯志红, 蔡树军, 敦少博, 刘波, 尹甲运, 张雄文, 房玉龙, 林兆军, 孟令国, 栾崇彪
Influence of drain bias on the electron mobility in the AlGaN/AlN/GaN heterostructure field-effect transistors
Lü Yuan-Jie (吕元杰), Feng Zhi-Hong (冯志红), Cai Shu-Jun (蔡树军), Dun Shao-Bo (敦少博), Liu Bo (刘波), Yin Jia-Yun (尹甲运), Zhang Xiong-Wen (张雄文), Fang Yu-Long (房玉龙), Lin Zhao-Jun (林兆军), Meng Ling-Guo (孟令国), Luan Chong-Biao (栾崇彪)
中国物理B
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2013, (6): 67104
-067104
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DOI: 10.1088/1674-1056/22/6/067104