Influence of Schottky drain contacts on the strained AlGaN barrier layer of AlGaN/AlN/GaN heterostructure field-effect transistors
曹芝芳, 林兆军, 吕元杰, 栾崇彪, 王占国
Influence of Schottky drain contacts on the strained AlGaN barrier layer of AlGaN/AlN/GaN heterostructure field-effect transistors
Cao Zhi-Fang (曹芝芳), Lin Zhao-Jun (林兆军), Lü Yuan-Jie (吕元杰), Luan Chong-Biao (栾崇彪), Wang Zhan-Guo (王占国)
Chin. Phys. B . 2013, (4): 47102 -047102 .  DOI: 10.1088/1674-1056/22/4/047102