Two-dimensional threshold voltage model of nanoscale silicon-on-insulator tunneling field-effect transistor
李妤晨, 张鹤鸣, 张玉明, 胡辉勇, 王斌, 娄永乐, 周春宇
Two-dimensional threshold voltage model of nanoscale silicon-on-insulator tunneling field-effect transistor
Li Yu-Chen (李妤晨), Zhang He-Ming (张鹤鸣), Zhang Yu-Ming (张玉明), Hu Hui-Yong (胡辉勇), Wang Bin (王斌), Lou Yong-Le (娄永乐), Zhou Chun-Yu (周春宇)
中国物理B
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2013, (3): 38501
-038501
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DOI: 10.1088/1674-1056/22/3/038501