Radiation damage effects on power VDMOS devices with composite SiO
2–Si
3N
4 films
高博, 刘刚, 王立新, 韩郑生, 宋李梅, 张彦飞, 腾瑞, 吴海舟
Radiation damage effects on power VDMOS devices with composite SiO
2–Si
3N
4 films
Gao Bo (高博), Liu Gang (刘刚), Wang Li-Xin (王立新), Han Zheng-Sheng (韩郑生), Song Li-Mei (宋李梅), Zhang Yan-Fei (张彦飞), Teng Rui (腾瑞), Wu Hai-Zhou (吴海舟)
中国物理B
.
2013, (3): 36103
-036103
.
DOI: 10.1088/1674-1056/22/3/036103