Supply voltage scaled dependency of the recovery of single event upset in advanced complementary metal-oxide-semiconductor static random-access memory cells
李达维, 秦军瑞, 陈书明
Supply voltage scaled dependency of the recovery of single event upset in advanced complementary metal-oxide-semiconductor static random-access memory cells
Li Da-Wei (李达维), Qin Jun-Rui (秦军瑞), Chen Shu-Ming (陈书明)
中国物理B . 2013, (2): 29402 -029402 .  DOI: 10.1088/1674-1056/22/2/029402