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Effects of O
2
/Ar ratio and annealing temperature on electrical properties of Ta
2
O
5
film prepared by magnetron sputtering
黄仕华, 程佩红, 陈勇跃
Effects of O
2
/Ar ratio and annealing temperature on electrical properties of Ta
2
O
5
film prepared by magnetron sputtering
Huang Shi-Hua (黄仕华), Cheng Pei-Hong (程佩红), Chen Yong-Yue (陈勇跃)
中国物理B . 2013, (
2
): 27701 -027701 . DOI: 10.1088/1674-1056/22/2/027701