High-power SiC MESFET using dual p-buffer layer for S-band power amplifier
邓小川, 孙鹤, 饶成元, 张波
High-power SiC MESFET using dual p-buffer layer for S-band power amplifier
Deng Xiao-Chuan (邓小川), Sun He (孙鹤), Rao Cheng-Yuan (饶成元), Zhang Bo (张波)
Chin. Phys. B . 2013, (1): 17302 -017302 .  DOI: 10.1088/1674-1056/22/1/017302