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Modeling of tunneling current in ultrathin MOS structure with interface trap charge and fixed oxide charge
胡波, 黄仕华, 吴锋民
Modeling of tunneling current in ultrathin MOS structure with interface trap charge and fixed oxide charge
Hu Bo (胡波), Huang Shi-Hua (黄仕华), Wu Feng-Min (吴锋民)
Chin. Phys. B . 2013, (
1
): 17301 -017301 . DOI: 10.1088/1674-1056/22/1/017301