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Improved efficiency droop characteristics in InGaN/GaN light-emitting diode with a novel designed last barrier structure
王天虎, 徐进良
Improved efficiency droop characteristics in InGaN/GaN light-emitting diode with a novel designed last barrier structure
Wang Tian-Hu (王天虎), Xu Jin-Liang (徐进良)
Chin. Phys. B . 2012, (
12
): 128504 -128504 . DOI: 10.1088/1674-1056/21/12/128504