Wet thermal annealing effect on TaN/HfO
2/Ge metal–oxide–semiconductor capacitors with and without a GeO
2 passivation layer
刘冠洲, 李成, 路长宝, 唐锐钒, 汤梦饶, 吴政, 杨旭, 黄巍, 赖虹凯, 陈松岩
Wet thermal annealing effect on TaN/HfO
2/Ge metal–oxide–semiconductor capacitors with and without a GeO
2 passivation layer
Liu Guan-Zhou (刘冠洲), Li Cheng (李成), Lu Chang-Bao (路长宝), Tang Rui-Fan (唐锐钒), Tang Meng-Rao (汤梦饶), Wu Zheng (吴政), Yang Xu (杨旭), Huang Wei (黄巍), Lai Hong-Kai (赖虹凯), Chen Song-Yan (陈松岩 )
中国物理B
.
2012, (11): 117701
-117701
.
DOI: 10.1088/1674-1056/21/11/117701