Effect of surface morphology on the electron mobility of epitaxial graphene grown on 0° and 8° Si-terminated 4H-SiC substrates
李佳, 王丽, 冯志红, 蔚翠, 刘庆彬, 敦少博, 蔡树军
Effect of surface morphology on the electron mobility of epitaxial graphene grown on 0° and 8° Si-terminated 4H-SiC substrates
Li Jia (李佳), Wang Li (王丽), Feng Zhi-Hong (冯志红), Yu Cui (蔚翠), Liu Qing-Bin (刘庆彬), Dun Shao-Bo (敦少博), Cai Shu-Jun (蔡树军)
中国物理B
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2012, (9): 97304
-097304
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DOI: 10.1088/1674-1056/21/9/097304