Temperature and drain bias dependence of single event transient in 25-nm FinFET technology
秦军瑞, 陈书明, 李达维, 梁斌, 刘必慰
Temperature and drain bias dependence of single event transient in 25-nm FinFET technology
Qin Jun-Rui (秦军瑞), Chen Shu-Ming (陈书明), Li Da-Wei (李达维), Liang Bin (梁斌), Liu Bi-Wei (刘必慰 )
中国物理B . 2012, (8): 89401 -089401 .  DOI: 10.1088/1674-1056/21/8/089401