An AlGaN/GaN HEMT with reduced surface electric field and an improved breakdown voltage
谢刚, Edward Xu, Niloufar Hashemi, 张波, Fred Y. Fu, Wai Tung Ng
An AlGaN/GaN HEMT with reduced surface electric field and an improved breakdown voltage
Xie Gang (谢刚), Edward Xu, Niloufar Hashemi, Zhang Bo (张波), Fred Y. Fu, Wai Tung Ng
中国物理B
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2012, (8): 86105
-086105
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DOI: 10.1088/1674-1056/21/8/086105