A new analytical model for the surface electric field distribution and breakdown voltage of the SOI trench LDMOS
胡夏融, 张波, 罗小蓉, 王元刚, 雷天飞, 李肇基
A new analytical model for the surface electric field distribution and breakdown voltage of the SOI trench LDMOS
Hu Xia-Rong(胡夏融), Zhang Bo(张波), Luo Xiao-Rong(罗小蓉), Wang Yuan-Gang(王元刚), Lei Tian-Fei(雷天飞), and Li Zhao-Ji(李肇基)
中国物理B
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2012, (7): 78502
-078502
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DOI: 10.1088/1674-1056/21/7/078502