Growth characteristics of amorphous-layer-free nanocrystalline silicon films fabricated by very high frequency PECVD at 250 ℃
郭艳青, 黄锐, 宋捷, 王祥, 宋超, 张奕雄
Growth characteristics of amorphous-layer-free nanocrystalline silicon films fabricated by very high frequency PECVD at 250 ℃
Guo Yan-Qing(郭艳青), Huang Rui(黄锐), Song Jie(宋捷), Wang Xiang(王祥), Song Chao(宋超), and Zhang Yi-Xiong(张奕雄)
中国物理B
.
2012, (6): 66106
-066106
.
DOI: 10.1088/1674-1056/21/6/066106