Breakdown voltage analysis of Al <sub>0.25</sub>Ga <sub>0.75</sub>N/GaN high electron mobility transistors with partial silicon doping in the AlGaN layer

段宝兴, 杨银堂

Breakdown voltage analysis of Al _0.25Ga _0.75N/GaN high electron mobility transistors with partial silicon doping in the AlGaN layer

Duan Bao-Xing(段宝兴) and Yang Yin-Tang(杨银堂)

中国物理B . 2012, (5): 57201 -057201 . DOI: 10.1088/1674-1056/21/5/057201