The influence of interfacial barrier engineering on the resistance switching of In 2O 3:SnO 2/TiO 2/In 2O 3:SnO 2 device
刘紫玉,张培健,孟洋,李栋,孟庆宇,李建奇,赵宏武
中国物理B . 2012, (4): 47302 -047302 .  DOI: 10.1088/1674-1056/21/4/047302