Effects of gate-buffer combined with a p-type spacer structure on silicon carbide metal–semiconductor field-effect transistors
宋坤, 柴常春, 杨银堂, 陈斌, 张现军, 马振洋
Effects of gate-buffer combined with a p-type spacer structure on silicon carbide metal–semiconductor field-effect transistors
Song Kun(宋坤), Chai Chang-Chun(柴常春), Yang Yin-Tang(杨银堂), Chen Bin(陈斌), Zhang Xian-Jun(张现军), and Ma Zhen-Yang(马振洋)
中国物理B
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2012, (1): 17202
-17202
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DOI: 10.1088/1674-1056/21/1/017202