A study of GaN MOSFETs with atomic-layer-deposited Al
2O
3 as the gate dielectric
冯倩, 邢韬, 王强, 冯庆, 李倩, 毕志伟, 张进成, 郝跃
A study of GaN MOSFETs with atomic-layer-deposited Al
2O
3 as the gate dielectric
Feng Qian(冯倩), Xing Tao(邢韬), Wang Qiang(王强), Feng Qing(冯庆), Li Qian(李倩), Bi Zhi-Wei(毕志伟), Zhang Jin-Cheng(张进成), and Hao Yue(郝跃)
中国物理B
.
2012, (1): 17304
-017304
.
DOI: 10.1088/1674-1056/21/1/017304