New 4H silicon carbide metal semiconductor field-effect transistor with a buffer layer between the gate and the channel layer
张现军, 杨银堂, 段宝兴, 陈斌, 柴常春, 宋坤
New 4H silicon carbide metal semiconductor field-effect transistor with a buffer layer between the gate and the channel layer
Zhang Xian-Jun(张现军), Yang Yin-Tang(杨银堂), Duan Bao-Xing(段宝兴), Chen Bin(陈斌), Chai Chang-Chun(柴常春), and Song Kun(宋坤)
中国物理B
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2012, (1): 17201
-017201
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DOI: 10.1088/1674-1056/21/1/017201