The advantage of blue InGaN multiple quantum wells light-emitting diodes with p-AlInN electron blocking layer
卢太平, 李述体, 张康, 刘超, 肖国伟, 周玉刚, 郑树文, 尹以安, 仵乐娟, 王海龙, 杨孝东
The advantage of blue InGaN multiple quantum wells light-emitting diodes with p-AlInN electron blocking layer
Lu Tai-Ping(卢太平), Li Shu-Ti(李述体), Zhang Kang(张康), Liu Chao(刘超), Xiao Guo-Wei(肖国伟), Zhou Yu-Gang(周玉刚), Zheng Shu-Wen(郑树文), Yin Yi-An(尹以安), Wu Le-Juan(仵乐娟), Wang Hai-Long(王海龙), and Yang Xiao-Dong(杨孝东)
中国物理B
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2011, (9): 98503
-098503
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DOI: 10.1088/1674-1056/20/9/098503