Effects of the strain relaxation of an AlGaN barrier layer induced by various cap layers on the transport properties in AlGaN/GaN heterostructures
刘子扬, 张进成, 段焕涛, 薛军帅, 林志宇, 马俊彩, 薛晓咏, 郝跃
Effects of the strain relaxation of an AlGaN barrier layer induced by various cap layers on the transport properties in AlGaN/GaN heterostructures
Liu Zi-Yang(刘子扬), Zhang Jin-Cheng(张进成), Duan Huan-Tao(段焕涛), Xue Jun-Shuai(薛军帅),Lin Zhi-Yu(林志宇), Ma Jun-Cai(马俊彩), Xue Xiao-Yong(薛晓咏), and Hao Yue(郝跃)
中国物理B
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2011, (9): 97701
-097701
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DOI: 10.1088/1674-1056/20/9/097701