A low-threshold and high-power oxide-confined 850-nm AlInGaAs strained quantum-well vertical-cavity surface-emitting laser
关宝璐, 任秀娟, 李川, 李硕, 史国柱, 郭霞
A low-threshold and high-power oxide-confined 850-nm AlInGaAs strained quantum-well vertical-cavity surface-emitting laser
Guan Bao-Lu(关宝璐), Ren Xiu-Juan(任秀娟), Li Chuan(李川), Li Shuo(李硕), Shi Guo-Zhu(史国柱), and Guo Xia(郭霞)
中国物理B
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2011, (9): 94206
-094206
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DOI: 10.1088/1674-1056/20/9/094206