Compound buried layer SOI high voltage device with a step buried oxide
王元刚, 罗小蓉, 葛锐, 吴丽娟, 陈曦, 姚国亮, 雷天飞, 王琦, 范杰, 胡夏融
Compound buried layer SOI high voltage device with a step buried oxide
Wang Yuan-Gang(王元刚), Luo Xiao-Rong(罗小蓉), Ge Rui(葛锐), Wu Li-Juan(吴丽娟), Chen Xi（陈曦), Yao Guo-Liang(姚国亮), Lei Tian-Fei(雷天飞), Wang Qi(王琦), Fan Jie(范杰), and Hu Xia-Rong(胡夏融)
中国物理B
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2011, (7): 77304
-077304
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DOI: 10.1088/1674-1056/20/7/077304