Fabrication of 160-nm T-gate metamorphic AlInAs/GaInAs HEMTs on GaAs substrates by metal organic chemical vapour deposition
李海鸥, 黄伟, 邓泽华, 邓小芳, 刘纪美
Fabrication of 160-nm T-gate metamorphic AlInAs/GaInAs HEMTs on GaAs substrates by metal organic chemical vapour deposition
Li Hai-Ou(李海鸥), Huang Wei(黄伟), Tang Chak Wah(邓泽华), Deng Xiao-Fang(邓小芳), and Lau Kei May(刘纪美)
中国物理B . 2011, (6): 68502 -068502 .  DOI: 10.1088/1674-1056/20/6/068502