Research on high-voltage 4H–SiC P–i–N diode with planar edge junction termination techniques
张发生, 李欣然
Research on high-voltage 4H–SiC P–i–N diode with planar edge junction termination techniques
Zhang Fa-Sheng (张发生), Li Xin-Ran (李欣然)
中国物理B . 2011, (6): 67102 -067102 .  DOI: 10.1088/1674-1056/20/6/067102