Enhancement-mode AlGaN/GaN high electronic mobility transistors with thin barrier
马晓华, 于惠游, 全思, 杨丽媛, 潘才渊, 杨凌, 王昊, 张进成, 郝跃
Enhancement-mode AlGaN/GaN high electronic mobility transistors with thin barrier
Ma Xiao-Hua(马晓华), Yu Hui-You(于惠游), Quan Si(全思), Yang Li-Yuan(杨丽媛), Pan Cai-Yuan(潘才渊), Yang Ling(杨凌), Wang Hao(王昊), Zhang Jin-Cheng(张进成), and Hao Yue(郝跃)
中国物理B
.
2011, (2): 27303
-027303
.
DOI: 10.1088/1674-1056/20/2/027303