Suppressing the hot carrier injection degradation rate in total ionizing dose effect hardened nMOSFETs
陈建军, 陈书明, 梁斌, 何益百, 池雅庆, 邓科峰
Suppressing the hot carrier injection degradation rate in total ionizing dose effect hardened nMOSFETs
Chen Jian-Jun(陈建军), Chen Shu-Ming(陈书明), Liang Bin(梁斌), He Yi-Bai(何益百), Chi Ya-Qing(池雅庆), and Deng Ke-Feng(邓科峰)
中国物理B
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2011, (11): 114220
-114220
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DOI: 10.1088/1674-1056/20/11/114220