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Investigation of AlGaN/GaN fluorine plasma treatment enhancement-mode high electronic mobility transistors by frequency-dependent capacitance and conductance analysis
全思, 郝跃, 马晓华, 于惠游
Investigation of AlGaN/GaN fluorine plasma treatment enhancement-mode high electronic mobility transistors by frequency-dependent capacitance and conductance analysis
Quan Si(全思), Hao Yue(郝跃), Ma Xiao-Hua(马晓华), and Yu Hui-You(于惠游)
中国物理B . 2011, (
1
): 18101 -018101 . DOI: 10.1088/1674-1056/20/1/018101