Improved performance of 4H-SiC metal-semiconductor field-effect transistors with step p-buffer layer
邓小川, 张波, 张有润, 王易, 李肇基
Improved performance of 4H-SiC metal-semiconductor field-effect transistors with step p-buffer layer
Deng Xiao-Chuan(邓小川), Zhang Bo(张波), Zhang You-Run(张有润), Wang Yi(王易), and Li Zhao-Ji(李肇基)
中国物理B . 2011, (1): 17304 -017304 .  DOI: 10.1088/1674-1056/20/1/017304