A continuous analytic channel potential solution to doped symmetric double-gate MOSFETs from the accumulation to the strong-inversion region
何进, 刘峰, 周幸叶, 张健, 张立宁
A continuous analytic channel potential solution to doped symmetric double-gate MOSFETs from the accumulation to the strong-inversion region
He Jin(何进), Liu Feng(刘峰), Zhou Xing-Ye(周幸叶), Zhang Jian(张健), and Zhang Li-Ning(张立宁)
中国物理B . 2011, (1): 16102 -016102 .  DOI: 10.1088/1674-1056/20/1/016102