Role of Ga vacancies in enhancing the leakage current of GaN Schottky barrier ultraviolet photodetectors
赵德刚, 张爽, 刘文宝, 江德生, 朱建军, 刘宗顺, 王辉, 张书明, 杨辉, 郝小鹏, 魏龙
Role of Ga vacancies in enhancing the leakage current of GaN Schottky barrier ultraviolet photodetectors
Zhao De-Gang(赵德刚), Zhang Shuang(张爽), Liu Wen-Bao(刘文宝), Hao Xiao-Peng(郝小鹏), Jiang De-Sheng(江德生), Zhu Jian-Jun(朱建军), Liu Zong-Shun(刘宗顺), Wang Hui(王辉), Zhang Shu-Ming(张书明), Yang Hui(杨辉), and Wei Long(魏龙)
中国物理B . 2010, (5): 57802 -057802 .  DOI: 10.1088/1674-1056/19/5/057802