Comparative studies of Ge and Si p-channel metal－oxide－semiconductor field-effect-transistors with HfSiON dielectric and TaN metal gate
胡爱斌, 徐秋霞
Comparative studies of Ge and Si p-channel metal－oxide－semiconductor field-effect-transistors with HfSiON dielectric and TaN metal gate
Hu Ai-Bin(胡爱斌) and Xu Qiu-Xia(徐秋霞)
中国物理B . 2010, (5): 57302 -057302 .  DOI: 10.1088/1674-1056/19/5/057302