Comparative study of different properties of GaN films grown on(0001) sapphire using high and low temperature AlN interlayers
薛军帅, 郝跃, 张进成, 倪金玉
Comparative study of different properties of GaN films grown on(0001) sapphire using high and low temperature AlN interlayers
Xue Jun-Shuai(薛军帅), Hao Yue(郝跃), Zhang Jin-Cheng(张进成), and Ni Jin-Yu(倪金玉)
中国物理B . 2010, (5): 57203 -057203 .  DOI: 10.1088/1674-1056/19/5/057203