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Pressure effect study on the
I
-
V
property of the GaAs-based resonant tunnelling structure by photoluminescence measurement
李秋柱, 王楷群, 菅傲群, 刘鑫, 张斌珍
Pressure effect study on the
I
-
V
property of the GaAs-based resonant tunnelling structure by photoluminescence measurement
Li Qiu-Zhu(李秋柱), Wang Kai-Qun(王楷群), Jian Ao-Qun(菅傲群), Liu Xin(刘鑫), and Zhang Bin-Zhen(张斌珍)
中国物理B . 2010, (
4
): 47310 -47310 . DOI: 10.1088/1674-1056/19/4/047310